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Number 3

Advancement in OPEFT Model

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  • Vrushali V. Kelkar and Shrinivas S. Joshi and Rajesh B. Lohani 2012. Advancement in OPEFT Model. International Journal of Applied Information Systems. 4, 3 (September 2012), 44-47. DOI=http://dx.doi.org/10.5120/ijais450649 
  • @article{10.5120/ijais2017451568,
author = {Vrushali V. Kelkar and Shrinivas S. Joshi and Rajesh B. Lohani},
title = {Advancement in OPEFT Model},
journal = {International Journal of Applied Information Systems},
issue_date = {September 2012},
volume = {4},
number = {},
month = {September},
year = {2012},
issn = {},
pages = {44-47},
numpages = {},
url = {/archives/volume4/number3/286-0649},
doi = { 10.5120/ijais12-450649},
publisher = { xA9 2010 by IJAIS Journal},
address = {}
}

  • %1 450649
%A Vrushali V.  Kelkar
%A Shrinivas S.  Joshi
%A Rajesh B.  Lohani
%T Advancement in OPEFT Model
%J International Journal of Applied Information Systems
%@ 
%V 4
%N 
%P 44-47
%D 2012
%I  xA9 2010 by IJAIS Journal

Abstract

High speed low cost monolithically integrated photo electronic circuits using metal semiconductor field effect transistors are highly using for variouswavelength optical communications. In recent years GaAs is more extensively used for the fabrication of ion implanted MESFET than any other material. This paper discusses the methods used to solve continuity equation and their comparison with respect to the voltage-current characteristics and the AC characteristics in dark and illuminated condition.

References

  1. Nandita S. Mishra, V. K. Singh, and B. B. Pal, "Effects of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET," IEEE Trans. Electron Devices, vol. 37, pp. 2–10,1990.
  2. P. Chakrabarti, N. L. Shreshtha, S. Srivastava and V. Khemka, "An improved model of ion-implanted GaAs OPFET ", IEEE Trans. on Electron Devices Vol. 39, No. 5, May 1992.
  3. NanditaSaha Roy and B. B. Pal, "Frequency-Dependent OPFET Characteristics with Improved Absorption under Back Illumination", Journal of Lightwave Technology, Vol. 18, No. 4, April 2000. .
  4. N. S. Roy, B. B. Pal and R. U. Khan, "Effect of substrate illumination on an ion impantedGaAs OPFET" IEE Proc. -Optoelectron. , Vol. 147, No. 3, June 2000
  5. Jaya V. Gaitonde and Rajesh B. Lohani, "One Dimensional Finite Difference Simulation of Back Illuminated OPFET", Proceedings of International Conference & Workshop on Emerging Trends in Technology 2011, Volume-II, February 25th & 26th 2011.
  6. Dr. B. K. Mishra, Lochan lolly and S. C. Patil, "InGaAs a next generation material for photodetector",Journal of Selected Areas in Microelectronics (JSAM), April Edition, 2011.
  7. Robert Soares, "GaAs MESFET Circuit Design. "
  8. Vrushali V. Kelkar and Dr. R. B. Lohani, "OPFET characteristics considering the effect of modified active layer material", Proceedings of International Conference & Workshop on Emerging Trends in Technology 2011, Volume-II, February 24th & 25th 2012.
  9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1983, pp. 755.
  10. Jaya T, Kannan V. , "Analytical Model for I-V Characteristics of Buried Gate MESFET", International Journal of Advanced Science and Technology Vol. 17,April 2010.
  11. Nandita Saha Roy,B. B. Pal and R. U. Khan,"Analysis ofGaAs OPFET with Improved Optical Absorption under Back Illumination," IEEE Transactions Election Devices,Vol. 46, pp. 2350-2353,Dec 1999

Keywords

Optoelectronic, photovoltage, OPFET, semi-transparent

Index Terms

Computer Science
Information Sciences