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Number 8

High-performance Dual-band Wireless Capacitive Pressure Sensor

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  • International Journal of Applied Information Systems
  • Foundation of Computer Science (FCS), NY, USA
  • Volume 7 - Number 8
  • Year of Publication:
  • Authors: M. M. Abutaleb, A. M. Anis
  • 10.5120/ijais14-451230
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  • M. M. Abutaleb and A. M. Anis 2014. High-performance Dual-band Wireless Capacitive Pressure Sensor. International Journal of Applied Information Systems. 7, 8 (September 2014), 28-31. DOI=http://dx.doi.org/10.5120/ijais451230
  • @article{10.5120/ijais2017451568,
    author = {M. M. Abutaleb and A. M. Anis},
    title = {High-performance Dual-band Wireless Capacitive Pressure Sensor},
    journal = {International Journal of Applied Information Systems},
    issue_date = {September 2014},
    volume = {7},
    number = {},
    month = {September},
    year = {2014},
    issn = {},
    pages = {28-31},
    numpages = {},
    url = {/archives/volume7/number8/677-1230},
    doi = { 10.5120/ijais14-451230},
    publisher = { xA9 2013 by IJAIS Journal},
    address = {}
    }
    
  • %1 451230
    %A M.  M.  Abutaleb
    %A A.  M.  Anis
    %T High-performance Dual-band Wireless Capacitive Pressure Sensor
    %J International Journal of Applied Information Systems
    %@ 
    %V 7
    %N 
    %P 28-31
    %D 2014
    %I  xA9 2013 by IJAIS Journal
    

Abstract

This paper presents the design of a high-performance dual-band wireless capacitive pressure sensor operating in harsh environment. The proposed design is composed of an absolute capacitive pressure sensor, pressure controlled oscillator (PCO), class-E power amplifier (PA) and an antenna. The sensor node collects and transmits the pressure variation in the term of frequency output wirelessly to a nearby base station. Simulation results show that the low frequency band can be tuned from 2. 1 to 2. 6 GHz while the high frequency band ranging from 4. 6 to 5. 1 GHz in a pressure range from 5 to 10 MPa with total output power from 16 to 14 dBm at 0. 35xB5m CMOS technology.

References

  1. M. A. Nandanwar, M. A. Gaikwad and D. Dandekar, "Low Power Low Phase Noise CMOS LC VCO-A Review," International Journal of Applied Information Systems, vol. 3, no. 3, pp. 37-41, July 2012.
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  4. A. M. Anis, M. M. Abutaleb, H. F. Ragai, M. I. Eladawy, "SiC Capacitive pressure Sensor Node for Harsh Industrial Environment," International Conference on Computational Intelligence, Modelling & Simulation, pp. 413 - 416, Sept. 2011.
  5. A. M. Anis, M. M. Abutaleb, H. F. Ragai, M. I. Eladawy, "Design of SiC Capacitive Pressure Sensor with LC-based Oscillator Readout Circuit," World Academy of Science, Engineering and Technology, issue 64, pp. 699 - 702, April 2012.
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  9. M. Suster, W. H. Ko, D. J. Young, "An Optically Powered Wireless Telemetry Module for High-Temperature MEMS Sensing and Communication," IEEE Journal of Microelectromechanical Systems, pp. 536–541, June 2004.

Keywords

Capacitive pressure sensor, class-E PA, LC-based oscillator, dual-band

Index Terms

Computer Science
Information Sciences